MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing originally published November 2007

originally published November 2007

The database includes over 1

This Test Method is especially applicable for silicon where boron is an unintentional p-type contaminant at trace levels (<5 × 1014 atoms/cm3)

1  The purpose of this Standard is to standardize requirements for ammonium fluoride 40% used in the semiconductor industry and testing procedures to support those standards

1-0813 (technical revision)

MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing originally published November 2007This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS. This Test Method can be used for silicon in which the dopant concentrations are less than 0. 2% (1 atoms cm3 1020 atoms cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0. 0012 cm and 1 cm for p type silicon and