M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals StdPbc-0716 SEMI E111-0305 (technical revision)

SEMI E111-0305 (technical revision)

and robotics has already been published as SEMI M74

This creates an ambiguity in measuring the edge lengths and other geometrical dimensions of wafers

2 3インチ鏡面研磨単結晶シリコンウェーハ（セカンダリフラットあり）

The interface must address the proper container orientation for material transfer and maintain continuity between the container and equipment environment in order to control particulate matter

M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals StdPbc-0716 SEMI E111-0305 (technical revision)This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Committee. Current edition approved by the Japanese Regional Standards Committee on June 1, 1999. Initially available at www. semi. org August 1999; to be published September 1999. The purpose of this document is to specify a method to measure resistivity and determine Hall mobility of semi