HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded このスタンダードは以下を期待される：

このスタンダードは以下を期待される：

1-1102 (Reapproved 0309) - オブジェクト基盤装置モデルのためのSECS-II プロトコル用暫定仕様

It provides an evaluation guide and reference sources appropriate to facilities and equipment where toxic and flammable gases are used and stored in gaseous or liquid form

Slices can be any crystallographic orientation and should be polished or lapped and etched on both surfaces

Most device applications require that mobile ionic charge be minimized

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded このスタンダードは以下を期待される：The sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is