M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging StdPbc-0117 Recognize the three main PSI

Recognize the three main PSI categories and the specific data gathered within them

provision is made for an associated human readable interpretation

the values stated in acceptable metric units are for information only

plastic microfluidic cartridges

To avoid any disturbance of future development and to facilitate interchangeability of diaphragm valves

M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging StdPbc-0117 Recognize the three main PSIBasal plane dislocations (BPDs) are detrimental for devices manufactured on 4H SiC substrates, especially for bipolar devices for power electronics. Most BPDs are transformed into threading edge dislocations (TEDs) when growing epitaxial layers on top of 4H SiC substrates, but a small fraction is also transferred into the epitaxial layer or may result in the formation of stacking faults (SFs), both being critical defects potentially causing device