+ 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat <110> < 110> Doping Zn doped Conductivity type P type Carrier Concentration (3 7)E18 cm3 Mobility 100 500 cm2 V. S EPD <10000 cm 2"> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat <110> < 110> Doping Zn doped Conductivity type P type Carrier Concentration (3 7)E18 cm3 Mobility 100 500 cm2 V. S EPD <10000 cm 2"> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat <110> < 110> Doping Zn doped Conductivity type P type Carrier Concentration (3 7)E18 cm3 Mobility 100 500 cm2 V. S EPD <10000 cm 2"> InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5 Battery Cell Tester Please Do not use tap – imh-uni.org

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InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5 Battery Cell Tester Please Do not use tap

$399.62

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Description

Please Do not use tap water directly

Size:              15mm  in dia x 3

Size:                 10x10x0

The prismatic cell tray is shown in Pic

Application case ----------------------  EQ-PCE-3

InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5 Battery Cell Tester Please Do not use tap2" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 2" dia x0. 5 mm + 20 microns Orientation: <100> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat <110> < 110> Doping Zn doped Conductivity type P type Carrier Concentration (3 7)E18 cm3 Mobility 100 500 cm2 V. S EPD <10000 cm 2

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