GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer 4N/15mm wide at 200 x

4N/15mm wide at 200 x 0

Motor speed: 10 - 70 rpm programmable

Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

If CVD gases are considered to be corrosive to stainless steel

especially for sodium-ion batteries

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer 4N/15mm wide at 200 xGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: undoped, Conductor type: SI (Semi insulating ) Carrier Concentration: N A Mobility: 3710 6230 cm^2 V. S EPD: N A Resistivity: (0. 8 4. 8)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces