Al2O3- Sapphire Wafer, R Plane, 1" dia x 0.5mm, 2SP - ALR25D05C2 Metal Foam Sheet Top Cap: 31

Top Cap: 31

Pressing Rod Diameter: 28mm ± 0

24V DC motor

Other ITO Film

Lattice constant at room temperature :   0

Al2O3- Sapphire Wafer, R Plane, 1" dia x 0.5mm, 2SP - ALR25D05C2 Metal Foam Sheet Top Cap: 31Fearures: R plane (1 102) orientation sapphire wafer is being used as a superconductor substrate due to less mis matched lattice and stable chemical and physical properties. Wafer size: 1" dia x 0. 4 0. 5 mm thickness (1 102) Rplane orientation + 0. 5 Deg Polished surface: Wafer surface is EPI polished via a special CMP procedure Two side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container