CdTe (111)B, Undoped ,P-type 10x10x1.0 mm, 1 Side polished with B face polished Thin Films A-Z If the power failure occurs

If the power failure occurs during testing

D alumina tube can be used at operating temperature up to 1700 oC in both oxidizing and reducing atmospheres

low-voltage

Wafer Size:                  10x10x0

Surface roughness: Ra < 5 A

CdTe (111)B, Undoped ,P-type 10x10x1.0 mm, 1 Side polished with B face polished Thin Films A-Z If the power failure occursSingle crystal CdTe Substrate Size: 10mm x 10mm x 1. 0 mm Orientation: (111)B + 2 degree Undoped P type specific resistivity: >1x 10^6 ohm cm Carrier concentration: <1012 cm 3 Polishing: Single side polished with B face Surface roughness: <15A Packing: in film supported box