GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters Co-axis Nozzle

Co-axis Nozzle

Instruction                     Cautions Please must always wear protection goggles during operation

Polished: two  sides

Adhesive Resin Layer (PPa): Acid-modified PP

+/-1 °C  accuracy

GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters Co-axis NozzleGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Sizes 2 Round Dimensions 50. 8mm + 0. 25mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Substrate Sapphirethickness: 0. 43mm+ 0. 025mm Conduction Type: N