InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished Cu Use the MSK-116A ironing machine

Use the MSK-116A ironing machine to smooth the folded section again and then iron the longer section against the sides of the case

For CVD and hydrogen furnace

15" OD larger diameter Alumina tube is made of high purity 95% Al2O3 material

SDS for Conductive Carbon

Material Cubic Boron Nitride

InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished Cu Use the MSK-116A ironing machine2" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 10x10x0. 45 mm + 20 microns Orientation: <111>A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2