50 ohm-cm Processing Tubes Please consult professional technicals beforeGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm Processing Tubes Please consult professional technicals before"> 50 ohm-cm Processing Tubes Please consult professional technicals beforeGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm Processing Tubes Please consult professional technicals before"> 50 ohm-cm Processing Tubes Please consult professional technicals beforeGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes Please consult professional technicals before – imh-uni.org

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Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes Please consult professional technicals before

$120.17

Quantity
50 ohm-cm Processing Tubes Please consult professional technicals before">
Description

Please consult professional technicals before installation

3mm(OD) x 15

Anode:    Anode Active+Acetylene Black (Conductive)+PVDF+NMP (or SBR+CMC)

Porosity: 50%-98%

18mm Coating The positive side of the casing is coated with aluminum Al coating thickness < 0

Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes Please consult professional technicals beforeGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

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