(0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> (0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> (0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing"> InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß 5 mm SiO2/ Si wafer – imh-uni.org

New Arrivals are Here-Fast Shipping from Our USA Warehouse

InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß 5 mm SiO2/ Si wafer

$419.18

Quantity
Description

5 mm  SiO2/ Si wafer (Prime Grade)

Au(Gold) Single Crystal  Substrate

The float is highly visible against a white background

(4'' to 2'')

bronze positive

InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating Ga2O3-ß 5 mm SiO2/ Si waferInP single crystal wafer Orientation: (111)A Size: 2" diameter x 0. 35mm Doping: Fe doped Conducting type: Semi Insulating Resistivity:>(0. 61 3. 25)E7 ohm. cm Mobility: 2090 2470 cm^2 v. s Polish: Two sides polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message