Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm Electrode Coating Preparation 34)10^-1 ohm

34)10^-1 ohm

the urethane absorbs the energy of the hammer blow

low-voltage

FTO film is coated on one side and  Please click here to see a figure showing where the ITO patterns are

Resistivity:>(0

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm Electrode Coating Preparation 34)10^-1 ohmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: