50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)"> 50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> 50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)"> 50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,"> Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2) – imh-uni.org

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Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)

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50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)">
Description

1220°C ~ 1500°C (in H2)

and demolding plate

MTI has granted the patent 201120462024

Silicon Carbide

Crystal  Structure /Lattice Constant(A)

Ge Wafer (100)N-type Undoped, 1" dia x 0.5 mm , 2SP,R:>50 ohm.cm - GEUa25D05C2R50 Dy 1220°C ~ 1500°C (in H2)Ge Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: two side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic,

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