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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US Hot Purity: 99

$399.62

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Purity: 99

Other Fused Silica Substrates:

It is designed for MTI multiple vessel rotary oven EQ-BGP-R8

Packing:    in 1000 class cleanroom with a vacuumed bag

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InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 1sp, Semi-insulating - IPFecA50D035C1US Hot Purity: 99InP single crystal wafer Orientation: (111)B Size: 2" diameter x 0. 35mm Doping: Fe doped Conducting type: Semi Insulating Resistivity:(1. 91 5. 02)E7 ohm. cm Mobility: 2230 2870 cm^2 v. s Polish: one side polished Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing

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