Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm GaN Template Mobility: (4890-5360) cm^2/V

Mobility: (4890-5360) cm^2/V

Water inlet & drain pipe

driven gas crimper is not going to contaminate the high purity glove box atmosphere if the crimper is driven by the corresponding glove box gas

Polyamide (JIS Z1714):                           0

( < 1 hour )

Ge Wafer (110) N-type Undoped, 1" dia x 0.5 mm , 1SP,R:>50 ohm.cm GaN Template Mobility: (4890-5360) cm^2/VGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 1" dia x 500 microns Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.