GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP Dispensers & Feeders 05 to 380 mL/min Peristaltic

05 to 380 mL/min Peristaltic Pump

5MPa (the cap valve will open to release interior high pressure -- if over 2

Pressing Rod Diameter: 28mm ± 0

75E-3 Torr l/s

Complete Package includes

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x3 x0.5 mm, 2SP Dispensers & Feeders 05 to 380 mL/min PeristalticGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x3 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces