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Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm In SPECIFICATIONS
Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm In SPECIFICATIONS
$54.05
Description
SPECIFICATIONS
of PTFE Body (liner): 18mm
Overall size: 165mm x 65mm x 203mm
Die10-S32 is a High Throughput 32-position pressing set
The conductivity of Lithium Ions will not be affected much by water and mild acids
Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm In SPECIFICATIONSSingle crystal Si, (CZ) Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (111)with 4 deg. off, Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate
Shipping Notes
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