GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 2sp Orientation 010 Wafer Size: 5 x 5

Wafer Size:                    5 x 5 x0

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TYPE:                                      NH20-210*210-24 mil

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65535 cycles

GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 2sp Orientation 010 Wafer Size: 5 x 5GaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 4" dia x 0. 55 mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 88 1. 98)E8 ohm. cm Carrier Concentration: N A Mobility: 4940 5060 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP