50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version isGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> 50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version is"> 50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version isGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> 50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version is"> 50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version isGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version is – imh-uni.org

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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version is

$149.47

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50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version is">
Description

220V AC 50/60Hz version is available upon request

Lib-PCC23140 is an aluminum prismatic cell case designed for 23140 EV battery

Ferrite and Glass

Two types of battery holders are included in the BST8-WA Standard package:

Standard Package

Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US XRD 220V AC 50/60Hz version isGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:

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