GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm Boron-Nitride on Silicon wait for 3 seconds

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9 Ton force

Size:                      5x5 x 0

220V Single Phase

Conductor type:              N-type

GaN Template ( 200nm) on Silicon Wafer, GaN (N type, undoped), Si(111) N-type P-doped,10x10x0.279mm,1sp R:1-10 ohm.cm Boron-Nitride on Silicon wait for 3 secondsGaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate. Specifications: Nominal GaN thickness: 0. 20? m 0. 1 ? m Front Surface finish (Ga face): <1nm RMS, As grown, Back surface finish: Silicon ( 111) N type P doped R: 1 10 ohm.