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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3 CdWO4 Surface finish: one side polished
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3 CdWO4 Surface finish: one side polished
$163.88
Description
Surface finish: one side polished
one KF25 vacuum port
160-180°C for lower blade
Milling Media One group stainless steel milling ball is included for immediate use (10 sets of SS balls with sizes from 6-20mm Diameter)
This split coin cell kit can be easily tightened or de-assembled by a wrench
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3 CdWO4 Surface finish: one side polishedGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35mm Polishing: One side polished Doping: Si doped Conductor type: N type Carrier Concentration: (1. 65 3. 92) x 10^18 cm^3 Mobility: 1440 2270 cm^2 V. S Resistivity: (1. 01 1. 90) E 3 ohm. cm EPD: < 500 cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Shipping Notes
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- Standard Shipping : 3-10 business days
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