Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick Al2O3 (Sapphire)

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick Al2O3 (Sapphire)Silicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation. U. S. Dept. of Commerce requires End User Certificate for

working temperature 1700 °C (3092°F) Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500°C

PTFE features high-performance anti-corrosion and higher thermal resistance up to 200°C (< 10mins)

1/8" NPS Valve

Sellenmeyer equation:                                        ho2 -1 =3

Size:                           4" diameter x 0

In order to keep constant pressure of inert gas inside the chamber

This furnace module (liner&heating elements inside) is designed for easy replacement of the KSL-1200X-UL liner and heating elements

Surface roughness

Maximum Working Temperature

Gas Pressure

Density: 1

5) with advantages of higher energy density and lower cost