GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3 C (Diamond) The compact flow meters are

The compact flow meters are ideal for MTI oven EQ-DZF-6020 Series

Safe to use without NRTL certification

Layers from outside to inside

nor covered under the warranty (Consumables)

Materials Case and cap are made of  Nickel plated A3 steel

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3 C (Diamond) The compact flow meters areGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 17 9. 38) x 10^17 cm^3 Mobility: 1 168 188 cm^2 V. S EPD: <5000 cm^2 Resistivity: (3. 96 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces