Ge Single crystal substrate, N-type Undoped (100) +/-2.5 Degree, 10x10x0.5mm, 1sp, R: >50 ohm.cm Milling Jars 5% Specific Capacity 110 mAh/g

5% Specific Capacity 110 mAh/g Coating Double sided Double Side Density 430-440 g/m^2 Application Note Video:

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Lattice constant: a=8

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Gold layer thickness: 50nm (+/- 5nm)

Ge Single crystal substrate, N-type Undoped (100) +/-2.5 Degree, 10x10x0.5mm, 1sp, R: >50 ohm.cm Milling Jars 5% Specific Capacity 110 mAh/gSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side epi polished Orientation: (100)+ 2. 5 Degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal