GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders Resistivity: 10-15 Ohm
$514.62
Description
Resistivity: 10-15 Ohm
Multiple battery analyzers can be connected to 1 PC via an ethernet switch ($100
Polishing: Two sides polished
One pack of 48173 accessories
Since June 3
GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders Resistivity: 10-15 OhmGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5
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