TeO2 (110) 10x10x0.5mm, 1sp - TeOe101005S1 Silicon Nitride (Si3N4) Substrate TTV/Bow/Warp: <25 um

TTV/Bow/Warp: <25 um

side polishd ( back side etched )

This system provides most applications in battery testing fields such as electrode materials research

heating rate upto 8 oC/second

(optional)

TeO2 (110) 10x10x0.5mm, 1sp - TeOe101005S1 Silicon Nitride (Si3N4) Substrate TTV/Bow/Warp: <25 umSingle crystal TeO2 Size: 10mm x 10mm x 0. 5mm Orientation: (110) Polish: one side EPI polished. Surface Roughness Ra: < 5A RMS For detailed physical properties, please click here Typical Properties Crystal Structure: Tetragonal, a= 4. 810 c=7. 613 Melting point: 730 oC Density: 5. 99 g cc Hardness: 4. 5 Mohs Photo elastic Coeff. ( 632. 8nm): P11=0. 074, P13= 0340, P31= 0. 091, P33=0. 240 Refractive inde: ho =2. 18 he = 2. 32 A O Figure of Merit: M2