Home
»
»
InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Attention: If a gas cylinder
InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Attention: If a gas cylinder
$125.92
Description
Attention: If a gas cylinder is used instead of air compressor(pic2)
Speed Precision 0
EPI Film :
) Dry 85120 Pouch Cell
Granularity (um)
InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Attention: If a gas cylinder10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: two sides polishd Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration 1. 35x10^15 cc @77K Mobility 6300 cm2 Vs EPD <=200 cm 2 Resistivity: 7. 34E 1
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Attention: If a gas cylinder){kind=link}