Si (100) 1" dia x 0.5mm, 1SP, P type B-doped, R:1-10 ohm-cm CeO2 please read these instructions carefully

please read these instructions carefully before installation and before using it for the first time

14x10-6          c: 9

Non- effactive area: 2

Put liquid thicken agent into 4 and stir (better have vacuum mixing)

Boiling Point:         2467°C

Si (100) 1" dia x 0.5mm, 1SP, P type B-doped, R:1-10 ohm-cm CeO2 please read these instructions carefullySpecifications: Single crystal: Si Conductive type: P type, B doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 1" diameter x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater