Si3N4 Silicon Nitride Ceramic Substrate, 10 x 10 x 1.0 mm, One Side Polished - CmSi3N4101010S1 Al2O3 Conducting type: Semi-Insulating

Conducting type: Semi-Insulating

Length: 60mm

SiO2(single crystal quartz)

ID:      25

Specific Capacity: 180 mAh/g

Si3N4 Silicon Nitride Ceramic Substrate, 10 x 10 x 1.0 mm, One Side Polished - CmSi3N4101010S1 Al2O3 Conducting type: Semi-InsulatingSi3N4 ceramic substrate is made by hot press Purity: > 99. 95% Density: > 99. 5% Size: 10 mm x 10 mm x 1 mm thickness Orientation: N A Polycrystalline Surface fitness: One side polished Surface roughness: < 30A Please click here to review typical Si3N4 physical properties Related Ceramic Substrate Aluminum Nitride Substrates: AlN Carbon Substrate & Foam ITO Coated Glass Plastic Silicon Nitride ( Si3N4) Substrate Aluminum Oxide Substrates Al2O3 Corning