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GaAs single crystal for evaporation, purity >99.995%, 5x5x5 mm as cut - GaAs050550SN YSZ (Yittrium stabilized ZrO2) Such a device is 1000

$22.94

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Description

Such a device is 1000 grade cleanroom compatible and it will satisfy the most demanding battery assembling environment

Working temperature: 1750°C (in air)

229 mm frame width ( ~ 9

It can be removed the NiO by annealing in the hydrogen furnace

Ball mill and sieve the powder and apply only the 32~75 microns powder to the pressing die to avoid the damages

GaAs single crystal for evaporation, purity >99.995%, 5x5x5 mm as cut - GaAs050550SN YSZ (Yittrium stabilized ZrO2) Such a device is 1000Composition: GaAs single crystal Purity: > 99. 995 % Size: 5x5x5 mm Surface: as cut Related Products Target A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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