Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped, R>1000 ohm-cm Hafnium(Hf) EQ-Die-60D is a Complete pressing

EQ-Die-60D is a Complete pressing die with 2 3/8" (60 mm) I

If you need a machine for pouch cells only

Click here to Learn how to mount/align sample

Single crystal CdTe  Substrate

Pressing die installation schematic            Instruction

Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped, R>1000 ohm-cm Hafnium(Hf) EQ-Die-60D is a Complete pressingThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 50 nm ( 500A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Un doped Resistivity: >1000 ohm cm Size: 50. 8 diameter + 0. 5 mm x 0. 3 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughnessm, Ra: < 5A(RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer