99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS"> 99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS"> 99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS"> AlN Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1 Ni-Coated Si Diameter: 20 mm (0 – imh-uni.org

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AlN Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1 Ni-Coated Si Diameter: 20 mm (0

$109.25

Quantity
Description

Diameter: 20 mm (0

Temper: H19

Surface finish (RMS or Ra) : < 8A

Polished surface:   Wafer surface is EPI polished via a special CMP procedure

Nominal ITO film thickness:115 (+/10%) nm

AlN Ceramic Substrate 1"x1"x 0.5mm, 1SP - CmAlN252505S1 Ni-Coated Si Diameter: 20 mm (0Specifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AlN5116) Size: 1" x 1" x 0. 5 mm Polishing: one side polished Surface Roughness: < 100A RMS

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