InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US Thin Film Deposition Chemical A-Z
$457.12
Description
Chemical A-Z
Operation Manual (In the CD with the shipment)
Substrate:
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Cylindrical Cell Assembling
InP - (VGF-Grown), (111)A, S doped, 2" x 0.5mm wafer, 1sp - IPScA50D05C1US Thin Film Deposition Chemical A-ZInP single crystal wafer Growing Method: VGF Orientation: (111)A Size: 2" diameter x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (0. 87 1. 19)x10^ 3 ohm. cm Mobility: 1400 1670 cmE2 V. S EPD: N A Carrier Concentration: (3. 15 5. 15) x10^18 cm^3 Surface Roughness: <4 nm EPI ready surface and packing
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