Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp Ni Notice: We strongly suggest you

Notice: We strongly suggest you keep an instant backup of the collected data using an external hard drive

Fast crushing and grinding the sample of ceramic and steel to 80-200 mesh before milling

Should damages be found

Purity > 99

Thickness: 11 um

Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp Ni Notice: We strongly suggest youSpecifications: Cu coated Si Wafer ( 10x10 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness of Ta diffusion barrier: 20 50 nm 0. 525 mm thickness Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , RA < 10 nm Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order