InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp Ga 0 mm thickness

0 mm thickness

you must sharpen the diamond blade frequently

For light evacuation application

Polished surface: One sideEPI polished via a special CMP procedure

It can be used to measure the sample's electrical properties at high temperatures

InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp Ga 0 mm thicknessInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 8 2. 0)x10^ 3 ohm. cm Mobility: 1850 1870 cmE2 V. S EPD: <2000 cmE2 Carrier Concerntration: (1. 7 1. 9) x10^18 cm^3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing