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GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 4N/15mm wide at 200 x
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 4N/15mm wide at 200 x
$181.12
Description
4N/15mm wide at 200 x 0
Copper gasket for threaded joint (1/4BSPP)
It proves inert to carbon and refractory metals in many severe situations
The mortar is octagonal and the pestle is cylindrical
L=L1+L2:=220+280=500mm
GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, 2sp,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3 Li1.5Al0.5Ge1.5P3O12 4N/15mm wide at 200 xGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (3. 8 6. 4) x 10^16 cm^3 Mobility: (3450 4150) cm^2 V. S Resistivity: (2. 74 4. 24) E 2 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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