ori. sapphire wafer is being used extensively as a substrate for III V nitrides and magnetic epitaxial films due to its better lattice mismatch Wafer size: 2" dia x 0. 5 mm thickness Orientaion: M plane <10 10>orn + 0. 5 Deg Polished surface: Wafer surface is EPI polished via a special CMP procedure. Price listed here is for one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with">
ori. sapphire wafer is being used extensively as a substrate for III V nitrides and magnetic epitaxial films due to its better lattice mismatch Wafer size: 2" dia x 0. 5 mm thickness Orientaion: M plane <10 10>orn + 0. 5 Deg Polished surface: Wafer surface is EPI polished via a special CMP procedure. Price listed here is for one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with">
ori. sapphire wafer is being used extensively as a substrate for III V nitrides and magnetic epitaxial films due to its better lattice mismatch Wafer size: 2" dia x 0. 5 mm thickness Orientaion: M plane <10 10>orn + 0. 5 Deg Polished surface: Wafer surface is EPI polished via a special CMP procedure. Price listed here is for one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with">
Whole set pressing die includes Double layer structure 120mm dry pressing die
the glove box can be vacuumed by a mechanical pump up to 0
Orientation <111> +/- 2 o
M plane orientation
Al2O3- Sapphire Wafer, M Plane, 2"Dia x0.5mm, 2SP - ALM50D05C2 Orientation 100 04 (74Features: M <10 10> ori. sapphire wafer is being used extensively as a substrate for III V nitrides and magnetic epitaxial films due to its better lattice mismatch Wafer size: 2" dia x 0. 5 mm thickness Orientaion: M plane <10 10>orn + 0. 5 Deg Polished surface: Wafer surface is EPI polished via a special CMP procedure. Price listed here is for one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with
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