+ 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Coating Thickness: 45um +/- 6um – imh-uni.org

New Arrivals are Here-Fast Shipping from Our USA Warehouse

SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Coating Thickness: 45um +/- 6um

$106.88

Quantity
Description

Coating Thickness: 45um +/- 6um

Bi-crystal Cu Cu Au Ag Al Ni

Polishing:                       One  side polished

Resistivity:                  (3

This version does not include the Stainless steel vacuum flanges with valves

SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y Coating Thickness: 45um +/- 6umSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message