Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1 Battery Consumables the software will provide instructions

the software will provide instructions and warnings for assistance

and twins If your application is susceptible to the defects

(optional) 100T Manual  100T Electric     200T Electric

Size:              10 x 10 x 0

Operating Temp Range 1200°C < 30 minutes

Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1 Battery Consumables the software will provide instructionsSingle crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: <110> with secondary orientation flat <110> Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single